Temperature-dependent characterization of SiC power electronic devices

Silicon (Si) unipolar devices are limited in breakdown voltages because of the low electric field strength of the material. Silicon carbide (SiC) unipolar devices, on the other hand, have 10 times greater electric field strength and hence they have much higher breakdown voltages compared with Si. They also have low static and dynamic losses compared with Si devices. Four commercially available SiC Schottky diodes at different voltage and current ratings and an experimental SiC VJFET sample have been tested to characterize their performance at different temperatures. Their forward characteristics and switching characteristics in a temperature range of -50 /spl deg/C to 175 /spl deg/C are presented. The results for the SiC Schottky diodes are compared with the results for a Si pn diode with comparable ratings. The experimental data were analyzed to obtain the device performance parameters like the on-state resistance and the switching losses.