Linearity analysis of SiGe HBT amplifiers using a power-dependent coefficient Volterra technique

To design high efficiency linear power amplifiers, it is always desired to clarify the main nonlinearity contributors in power amplifiers. The linearity of a silicon germanium (SiGe) heterojunction bipolar transistor (HBT) power amplifier is analyzed with the help of a power-dependent coefficient Volterra technique. The effect of emitter inductance is included and the dominant sources of nonlinearity are identified.