Ge in main-stream CMOS: a future or fancy?

Summary form only given. As scaling continues, attention is returning to germanium and Ge-on-insulator (GOI) MOSFETs. This paper considers whether Ge technology is a viable alternative or a fanciful diversion. It discusses the scalability of Ge MOSFETs, the use of high-k dielectrics, cost effectiveness, and the circuits most likely to benefit the most, such as low power, high performance, memory, and optoelectronics.