Large emitting area GaN based light emitting diode fabricated on conducting copper substrates

This letter reports on the large-area light-emission GaN LEDs with the size of 1050/spl times/1050 /spl mu/m/sup 2/ fabricated by metal bonding and LLO techniques. The large-area LEDs showed a uniform light-emission pattern over whole mesa without transparent contact layer due to uniform current spreading in n-type GaN layer. The large-area LEDs can easily be driven to above 1 A without output-power degradation, which is applicable to illumination applications.