Integration and cell characteristics for high density PRAM

A 64 Mb phase change random access memory, based on 0.18 /spl mu/m technology is developed. We proposed several key factors such as BEC and GST cell size, contributing to stabilization of writing current for reversible cell transition. By reducing writing current to 1.1 mA through such optimization, we have developed a 64 Mb PRAM. With memory functions and reliability tests, the feasibility for developing high-density 64 Mb PRAM is presented.