Modeling vertical channel junction field effect devices in silicon carbide

The electrical characterization and model development for silicon carbide (SiC) vertical channel SIT and JFET structures are presented in this work. A compact model is developed based on the device geometry and SiC material properties. Northrop Grumman validates the model against measured data at 25 /spl deg/C and 100 /spl deg/C for a prototype 0.03 cm/sup 2/ SiC SIT provided. The model's on-state and transient characteristics are validated over this temperature range. Validation of the model shows excellent agreement with measured data. The physics-based approach implemented in this model is crucial to describing the transient behavior over a wide range of application conditions and temperature ranges.