The operation temperature of silicon power thyristors and the blocking leakage current

Typical experimental blocking I-V characteristics measured from room temperature up to high junction temperature for commercial thyristors available on the market at this time are presented. It is shown that the surface peripheral leakage current is a factor which prevents operation above 125 /spl deg/C. Further reduction of the surface component of the off - state blocking leakage current could enable reliable operation of power thyristors at higher junction temperature of at least 150 /spl deg/C.