Research on minitype high peak and narrow width pulsed driver circuit of LD

To get high performances of narrow pulse, high peak, small rising time and small volume for semiconductor LD, an audion is adopted to drive MOSFET in this paper. After numbers of simulations, experiments and comparisons, a circuit of LD is designed, whose area is less than 1 cm/sup 2/, pulse width is less than 5 ns, rising time is less than 6 ns and current peak is more than 20 A. Furthermore, a DC-DC converter is implemented without external MOSFET. Its volume is very small with 5 V input, and a broad range voltage can be obtained.