Charge trapping and intermodulation in HEMTs

Charge trapping effects in high electron mobility transistors (HEMTs) are linked to anomalous intermodulation behavior, known as memory effects. This behavior can be observed clearly as changes in intermodulation levels with tone-spacing, and two-tone asymmetry. A Volterra-series analysis of an HEMT with trapping predicts the distortion accurately, and allows an understanding of the mechanisms involved.