A new physics based dynamic electro thermal large signal model for RF LDMOS FETs

This paper describes a new large signal model for RF LDMOS devices using a physics based sub-circuit model composed of standards public domain non-linear model building blocks. The model realizes accurate temperature and geometry scaling. The built-in thermal node gives an accurate description of terminal characteristics for static and dynamic temperature conditions. An efficient and straightforward parameter extraction procedure has been defined based on a concise set of measurements. The RF large signal simulation capabilities are demonstrated by comparison with 1-tone and 2-tone load pull measurements for small on-wafer measured (<5W) and large in-fixture measured (>10W) devices. The model is presently used for predictive circuit simulation of LDMOS MMICs and discrete power devices.