B-DTNMOS: a novel bulk dynamic threshold NMOS scheme

Dynamic threshold MOS circuits offer speed and energy saving advantages over the conventional subthreshold MOS circuits; they are faster and consume less energy. In this paper a new Bulk Dynamic Threshold MOS scheme for NMOS transistors (B-DTNMOS) in Domino-like dynamic circuits is introduced. Up to the author's knowledge, this is the first dynamic threshold scheme for NMOS transistors in Bulk-CMOS technology without altering the process technology. In this scheme the common substrate of all the NMOS transistors is connected to the clock signal in dynamic circuits. The proposed scheme is shown to be 63% faster and has 37.2% energy savings compared to the regular subthreshold dynamic MOS circuits. The scheme is shown also to be more robust against temperature and process parameters variations.