Effects of ion-implantation on light-emitting FeSi/sub 2/ shallow junction

Effects of ion-implantation and substrate orientation on nanostructures and photoluminescence (PL) of the ultra-thin /spl beta/-FeSi/sub 2/ films were investigated. Ion-implantation was found to enhance the formation of /spl beta/-FeSi/sub 2/. PL characteristics were strongly affected by implantation species and substrate orientation. The strongest intensity of PL was observed in epitaxial /spl beta/-FeSi/sub 2/ ultra-thin films on BF/sub 2//sup +/-implanted (111)Si.