USJ formation & characterization for 65nm node and beyond

Multiple new methods of forming ultrashallow junctions (USJ) are being pursued for. 6Snm node based on; I) new ion implantation hardware designs, 2) new cluster ion dopant species, 3) new zero diffusion dopant activation annealing equipment and 4) non-implantation alternative selective epi in-situ doping techniques. Also, improved accurate measurement and characterization techniques to determine the electrically active dopant level and depth : profile as opposed to the chemical (electrically inactive) dopant level and profiles are being developed.