Experimental characterization of on-chip inductor and capacitor interconnect: part II. Shunt case

We present a wide-band experimental characterization of an on-chip shunt inductor and capacitor (LC) interconnect. (A previous paper by the authors considered the series LC case). In order to capture the effects of parasitic parameters on the wide-band transmission and reflection characteristics of shunt LC interconnects, we propose a generalized frequency-independent circuit model for fast-running simulations. The model is accurate to above its second resonant frequency, with low average simulation errors for both reflection and transmission coefficients compared to the measured two-port S parameters over the frequency range of 1 to 14 GHz.