Highly c-axis-oriented AlN film using MOCVD for 5GHz-band FBAR filter

We have successfully developed to deposit highly c-axis-oriented aluminum nitride (AlN) film using metal-organic-chemical-vapor deposition (MOCVD). Full-width at half-maximum (FWHM) of the deposited AlN(0002) film whose thickness was 1 /spl mu/m has found to be 2.98/spl deg/. The value of FWHM means the deposited film has the electromechanical coupling coefficient (K/sup 2/) of 6.4%. The conditions of deposition were substrate temperature of 1050/spl deg/C, pressure of 20Torr, and V-III ratio of 25000. Film-bulk-acoustic resonator (FBAR) band-pass filter for 5 GHz orthogonal-frequency-division multiplexing (OFDM) wireless local area network (WLAN) system has been designed using the c-axis-oriented AlN film. The designed band-pass filter has the sufficient bandwidth of more than 100 MHz, which is evaluated from butterworth-van dyke (BVD) equivalent circuit model of FBAR.