Residual charges effect on the annealing behavior of Co-60 irradiated MOS capacitors

It was experimentally observed that the residual charges of an MOS capacitor after C-V testing can exist for a long time. These charges include a nonzero field at the SiO/sub 2//Si interface, and subsequently affect the annealing behavior due to a charge-temperature effect if the MOS capacitor is left floating during annealing. This problem is solved by a flat-band condition annealing method based on a charge-temperature technique. The annealing kinetics of a Co-60 irradiated MOS capacitor are then studied. A power-law behavior of the annealing kinetics has been obtained for oxide charges annealed at 300 degrees C. Possible explanations are given for this observation.<>