Growth and optical properties of GaN-based quantum dots

GaN-based quantum dots were grown by low-pressure metalorganic chemical vapor depositions. High-density In-rich InGaN/GaN quantum dots were successfully grown by low temperature growth. In-rich InGaN/GaN quantum dots showed enhanced emission properties whose wavelength could be controlled to even near-ultraviolet region. Large blue shift of emission peaks from In-rich InGaN quantum dots is supposed to be due to the strong carrier localization effect caused by small size and large band-offset in the structure.