Low temperature sintering process for deposition of nano-structured metal for nano IC packaging

This paper presents the study of some nano-sized metal powders, and the processes of depositing these on silicon wafers, for use in nano-structured wafer level interconnects. Nano-powders, /spl sim/50-100 nm, of copper and silver, obtained by electro-explosion of the metal wire, are used in this study. Pastes were obtained by suspension of the nano metallic powder in surfactants, organic carriers and reducing agents. The pastes were printed onto surface-treated silicon wafers and sintered at around 400/spl deg/C. Results show that there is a potential of lowering the sintering temperature to 200/spl deg/C, which would be more ideal for microelectronics applications.