High performance 90/65nm BEOL technology with CVD porous low-k dielectrics (k/spl sim/2.5) and low-k etching stop (k/spl sim/3.0)

Successful integration of high performance Cu dual damascene interconnects (DDIs) using a low-k etch stop (LES, oxygen-doped carbide, k/spl sim/3.0) and a porous low-k IMD (OSG, k/spl sim/2.5) has been demonstrated for the first time. The Cu DDIs with the LES not only revealed excellent resistance to stress induced voiding (SIV) but also exhibited 21% better interconnect RC delay, 100% higher via-EM endurance, 100 times lower line-line leakage at 125/spl deg/C, and 5% faster device operation speed as compared to the DDIs with a currently used etch stop (CES, oxygen-doped carbide, k/spl sim/4.5).