New Ge-Me and Si-Me thin film compositions for high-temperature thermal converter construction

The applicability of some thin films based on Ge-Me and Si-Me compositions in the thermal converter construction for high-temperature range has been investigated. All films were deposited by d.c. pulse magnetron sputtering. Testing converters contained the integrated thermopile with linear symmetry based on p-type Ge(Sb,V) and TiSi/sub 2/ material combination and the heater built up using MeSi/sub 2/ (Me: Mo, V, W, Ta, Ti) compositions with TCR varying from 0 to -1500 ppm/K. This choice permits to control the uniformity of distribution of temperature field. Various material combinations have been evaluated with the respect to the performance characteristics of thermal converters.