Poly-silicon thin layer photodetector structures

A photodetector structure based on thin poly-Si layers together with technological process and structure optoelectronic characterisation are presented. The optical improvement of the structure by the reflection of unabsorbed radiation on the backside and by the reflectance minimizing on the topside by antireflecting coating was analyzed. The structure optoelectronic characterization revealed a good sensibility of 60 /spl mu/A/klx and a fast response.