Novel photoelectric techniques characterization of semiconductor laser and photodetector materials

In this work for the first time we have developed a novel and efficient techniques for characterization of nonlinear and laser materials by using a time-resolved photoelectric spectroscopy which allows the measurements of the form of laser pulse as well as the pulse photocurrent (PPC) appearing in the crystal during laser excitation with the time window about 0.1 ns. For the excitation of crystal the pulse nitrogen laser was used. The pulse power was 5 KW. In this experiment the photorefractive V-doped CdTe and CdHgTe crystals were investigated. This technique includes the additional monochromatic illumination the front surface of the samples. Changing the wavelength of monochromator, one can carry out the recording of the time-resolved spectrum which is caused by the change in PPC which caused the detrapping of electrons photogenerated by the pulse laser excitation. For the purpose of the more complete characterization of the investigated CdTe:V crystals the absorption, photogalvanic current and photoconductivity spectra were measured