Laser heterostructures AlGaInAsSb/GaInSbAsP/GaSb(InAs) for middle infra-red range

This work shows that pentanary solid solutions (PSS) AlGaInAsSb and GaInSbAsP isoperiodic to GaSb and InAs substrates give wide possibilities to control heterojunction parameters. Heterojunctions I, II and III types can be formed for the lightwave range /spl lambda/=3-4/spl mu/m. Valence and conductivity band offsets can be varied in a wide range at a constant energy gap of the active region. AlGaInAsSb/GaInSbAsP/GaSb(InAs) heterostructures were grown from Sb-rich melts by liquid phase epitaxy (LPE) method at 570-600 /spl deg/C.