An integrated 5.2GHz CMOS T/R switch with LC-tuned substrate bias

A 0.56mm/sup 2/ T/R switch in 0.18/spl mu/m CMOS achieves 1.5dB insertion loss, 28dBm P/sub 1cB/, 30dB isolation and 4kV HBM ESD rating. The switch uses an on-chip LC-tuned substrate biasing technique to enhance linearity and allows the LNA and PA to be matched independently. Power dissipation is 30/spl mu/W.