As and Sb diffusion profiles in thin silicon-on-insulator wafers

As and Sb diffusion profiles in bulk Si and thin SOI (silicon on insulator) were measured using SIMS (Secondary Ion Mass Spectroscopy) and simulated using TSUPREM4. No difference was observed between diffusion profiles in bulk Si and those in SOI. This is in contrast with the B and P diffusions, for which the diffusion is retarded in SOI. This is because the diffusion coefficients of As and Sb are much smaller than those of B and P.