Suppression of migration during low pressure annealing for selective epitaxial growth on ultra-thin SOI

The paper deals about suppression of migration during low pressure annealing for selective epitaxial growth on ultra-thin SOI. The novel process sequence was proposed that satisfies both the suppression of the migration and the removal of native oxide by controlling the pressure and the temperature of hydrogen annealing. The proposed process was successfully applied for the formation of elevated source and drain structure fabricated on ultra-thin SOI wafer.