Formation of low-resistive ultra-shallow n+/p junction by heat-assisted excimer laser annealing

Low-resistive ultra-shallow n/sup +//p junctions were formed with Sb by a heat-assisted laser annealing method. A wide process window for laser energy density and heating temperature was obtained. Under that condition, Sb diffusion was small and did not affect junction depth. The obtained sheet resistance was about 540/spl Omega///spl square/ for junction depth of 21 nm.