Very low defects and high performance Ge-on-insulator p-MOSFETs with Al/sub 2/O/sub 3/ gate dielectrics

We demonstrate for the first time high quality and dislocation free Ge-on-insulator (GOI) p-MOSFETs with Al/sub 2/O/sub 3/ gate dielectrics [EOT=1.7 nm]. Compared to control Al/sub 2/O/sub 3//Si p-MOSFETs, the Al/sub 2/O/sub 3//GOI devices show similar leakage current for the same EOT, 2X increase in drive current, and 2.5X increase in hole mobility. In addition, the Al/sub 2/O/sub 3//GOI devices exhibit 1.3X enhanced hole mobility over the SiO/sub 2//Si universal hole mobility at E/sub eff/ of 1 MV/cm.