Dual-band sub-1 V CMOS LNA for 802.11a/b WLAN applications

This paper presents the design and experimental results of a dual-band CMOS low noise amplifier (LNA), which can operate from a supply voltage as low as 0.7 V. A switched inductor technique is used. The LNA was fabricated in a standard 0.18 /spl mu/m CMOS process, and is designed to be used in a dual-band 2.4- and 5-GHz WLAN receiver. With a 1 V supply, the LNA exhibits a measured power gain and noise figure of S/sub 21/=11.6 dB and NF=2.3 dB for the 2.4 GHz band, and S/sub 21/=10.8 dB and NF=2.9 dB for the 5 GHz band.