Extrinsic leakage current on InP/InGaAs DHBTs

This paper presents results of aging tests obtained on InP/InGaAs HBT on InP substrate and associated test structures. An extrinsic current path between measurement pads is shown to be responsible for HBT leakage current evolution. No aging mechanism located in the intrinsic device has been observed either after 500 hours under 180/spl deg/C stress temperature nor after 100 hours under 250/spl deg/C stress temperature.