Data retention, endurance and acceleration factors of NROM devices

Reliability studies of Saifun NROM devices are presented. Data retention characteristics vs time, temperature and cycling level are explained based on a charge trapping and re-emission model. The thermal acceleration factor between ambient storage and 150/spl deg/C is shown to be 7/spl times/10/sup 5/. Storage life at room temperature after 100K memory cycles is predicted to be in excess of 100 years. A qualification method of NROM devices is discussed in view of these results.