Evidence for hydrogen-related defects during NBTl stress in p-MOSFETs

This work gives an insight into the degradation mechanisms during a negative bias instability stress on ultrathin oxides (t/sub ox/=20 /spl Aring/). The generation of interface traps and oxide defects is shown to impact parameters such as the threshold voltage. Their generation is linked to the release of hydrogen species at the interface according to the hydrogen release model. Only hot holes can be trapped by the anode hole injection phenomenon.