Consideration on unique radiation-tolerance properties of solar cells made with InP-family

Radiation effects on solar cells and materials are one of the most important research issues for space cells because superior radiation-resistance is required for space cells as well as high conversion efficiency. In this study, radiation damage introduction in InP-based solar cells has been analyzed in order to clarify the mechanism on better radiation-resistance of InP-based materials and solar cells compared to GaAs-based cells that the authors have found. In addition, minority-carrier injection-enhanced annealing phenomena in InP-based cells have also been discussed. Indium-related and phosphorus-related defects are thought to be responsible for lower defect introduction rate and for minority-carrier injection-enhanced annealing phenomena, respectively.