Rapid thermal processing of CIS precursors

An alternative process for CuInSe/sub 2/ formation is presented. In this approach, a binary two-layer precursor CuSe/In-Se is first deposited on a Mo/glass substrate at low temperature by migration enhanced epitaxy (MEE). When the Se ambient is controlled, rapid thermal processing (RTP) is able to synthesize single phase CuInSe/sub 2/. The structure, morphology, and composition of the films were characterized by XRD, SEM and ICP.