The effect of Ge doping on p-type higher manganese silicides (HMS)

Ge doped HMS was prepared by Bridgman method. It was reconfirmed that the electrical conductivity increases depending on the amount of doped Ge and the changes in textures of HMS appeared. The result of powder X-ray diffraction patterns show the increase of diffraction from MnSi, and by Reitvelt analysis it is found that the volume occupational ratio of MnSi increases. MnSi is well known a p-type metal which has carriers of the order of 10/sup 22//cm/sup 3/. It is supposed that MnSi provides additional p-type carriers then all phenomena are consistent.