SOS/DBD-based solid state switching for ultra-high-power short pulse generation

This report deals with experiments on generation of ultra-high-power short pulses in solid-state switches and describes characteristics of new modulators. The first type of devices is based on subnanosecond semiconductor opening switches (SOS) acting as the switching element in the final power amplifier. This principle underlies the design of solid-state modulators providing a pulse length of 3 to 8 ns, a pulse power of 50 MW to a GW-level, a voltage of 50 kV to 1 MV, and a pulse repetition frequency up to a few kHz. Modulators of the second type are based on additional peaking of pulses by means of closing devices utilizing the principle of a delayed ionization shock wave (DBD). In this case a SOS generates an overvoltage across the DBD at a rising rate of about 10/sup 14/ V/s. As a result, the current is switched to the load via the DBD in less than 1 ns. Modulators of the second type provide an output voltage of hundreds of kV with a rise time of less than 1 ns, a peak power of up to 1 GW, and a pulse length of 1 to 2 ns.