An accurate and compact large-signal model for MESFETs, HFETs and PHEMTs

A new large-signal model and modeling method are presented. The pulsed I-V testing data is adopted to suppress the effects of traps and self-heating. The model has the enhanced simulation accuracy and convergence property. The improved parameter extraction technique has the features of efficiency and accuracy. The novel model has been verified in terms of I-V, C-V and power performance for different PHEMTs, HFETs and MESFETs as well as circuits.