A 5-GHz LNA for wireless LAN application based on 0.5 /spl mu/m SiGe BiCMOS

This paper presents a 5-GHz band LNA using 0.5 /spl mu/m SiGe BiCMOS technology for wireless LAN application. To improve gain and linearity, the proposed LNA adopted a unique combination of inter-stage series resonance and linearity-enhancing bias circuit. The proposed LNA shows power gain of 18.3 dB, a noise figure 1.65 dB, and IIP3-3.95 dBm while dissipating 11 mA from a 3 V power supply, based on simulation.