Monte-Carlo simulation of the DC characteristics of microwave MESFET power devices

Measured data from various GaAs materials and device evaluation programs are analyzed and correlated. The approach taken is to compare correlation plots of certain active-layer and DC data to simulated plots based on an approximate idealized MESFET model. The measurement data wee obtained from devices processed on substrates grown by low-pressure and high-pressure Czochralski techniques. The purpose of the correlation is to assess the merits of GaAs materials grown by the two methods and to establish the uniformity of ion implantation, annealing, and processing of full 3-in.-diameter substrates. Since the characteristics of the devices seemed to be process and device related, correlation plots of measured data are compared with correlation plots of Monte Carlo simulations to help identify what process or device parameters were causing the observed variations in DC characteristics.<>