Resist line edge roughness study for next generation lithography: experiment and modeling

We report the results of an experimental and simulation study of the line edge roughness (LER) for resists patterned with next generation lithography tools such as extreme ultraviolet (EUV), electron beam, and x-ray. Poor aerial image contrast (AIC) has been applied intentionally to create rough line edges. The characterization has been performed using atomic force microscopy (AFM) with carbon nanotube tips and high resolution scanning electron microscopy (SEM). Simulation results based on percolation theory are compared with experimental results.