Lateral extension engineering using nitrogen implantation (N-tub) for high-performance 40-nm pMOSFETs

Lateral extension engineering using a nitrogen-implantation (N-tub) process has enabled high performance 40-nm pMOSFETs that overcome the trade-off between drive current and short channel immunity. The data show that an N dose of above 1/spl times/10/sup 14/ cm/sup -2/ effectively suppresses B diffusion, especially in the lateral extension tail. As a result, we realized a 13% improvement in CV/I from conventional process.