Quantum-well memory device (QWMD) with extremely good charge retention

We propose and demonstrate a new device that utilizes a quantum well (its dimensions determined by two self-limiting processes) as a floating gate. We show that fast programming and erasing can be achieved. Excellent charge retention (ten years) is obtained, for 2.7 nm thin tunneling oxide, at room temperature, and for 5 nm thin tunneling oxide even at elevated temperature.