Gallium arsenide injection laser

LASERS have aroused great interest in the electronic field, both as coherent, highly directional light sources and for their promise in broadband communication. This paper will describe a GaAs infrared laser in which the pumping is provided by injection of carriers across a pn junction. The coherent light produced by recombination of the injected carriers can be modulated directly by varying the input current. This represents a major advance over optical or electrical discharge pumping in ease and simplicity of pumping and modulating the laser beam.