A 60ns 4Mb CMOS DRAM with built-in self-test

4 4Mb CMOS DRAM with 60ns access time, 50mA active current and 200μA standby current will be described. Three functional modes, i.e., fast page, static column and nibble modes are available by metal mask options. The chip has a built-in self-test function enabling an automatic simultaneous test of all chips on a computer board