Low temperature deposition of hafnium silicate gate dielectrics for TFTs on plastic substrates

Summary form only given. Hafnium silicate (HfSi/sub x/O/sub y/) is being studied as a potential candidate material to replace SiO/sub 2/ as the gate dielectric in scaled silicon transistors due to its relatively high dielectric constant and high thermal stability. The dielectric constant of HfSi/sub x/O/sub y/ is /spl sim/8-15, depending on composition, which is 2-4 times higher than SiO/sub 2/. In this paper we describe the formation and characterization of hafnium silicate by UV/O/sub 3/ oxidation of hafnium silicide as a potential gate dielectric candidate for high performance thin-film transistors on plastic substrates.