Session 21: IMPATT and Bipolar Oscillators

System requirements for microwave solid state amplifiers and oscillators continue to demand improvements in both device and circuit performance. Device parameters such as power, frequency, efficiency, and reliability as well as circuit parameters such as bandwidth, power flatness and noise are under extensive investigation in many laboratories. New developments in these areas pertaining to both IMPATT diodes and bipolar transistors will be presented in this session. Three of the papers deal with IMPATT diodes while the fourth involves bipolar transistors.