Non Linear Equivalent Circuit For Broadband GaAs MESFET Power Amplifier Design

A non-linear equivalent circuit is developed to model the fundamental frequency r.f. performance of a 1µm x 800 µm GaAs MESFET, based on two-port large-signal amplifier measurements between 6-8 GHz. Potentially larqe-band, the circuit accurately predicts in-band AM/PM conversion and saturation of the device with arbitrary terminal loads.