High Power Microwave Static Induction Transistor

A new type of the transistor called "Static Induction Transistor (SIT)", based on a short channel vertical J-FET structure, has been successfully verified as a promising device for microwave high power operation. The experimental transistors we fabricated have demonstrated the following remarkable features; (1) f/sub max/ of above 5 GHz, (2) amplifying output power of 13 watts at 1GHz and (3) oscillating output power of 100 watts at 200 MHz. These data are the highest among any reported FET transistors at this frequency range.