A High Power MIC Passive Diode Receiver Protector with Integral STC Using Variable Basewidth Techniques

A passive MIC receiver protector using graded diode basewidths has been developed that handles 200 watt RF pulses at 10 percent duty rates on a 1.5 x 1.75 x 0.025 inch alumina substrate. Leakage power and recovery period are under 20 mW peak spike, 10 mW peak flat, and 0.8 mu s. Data on harmonic generation is included. Integral STC during the receive period is included with the associated MIC digital driver.