An Investigation of a Double Surrounding Gate Indium-Arsenide Source Metal-Oxide-Semiconductor Field Effect Transistor (DSG-IASM-FET) for Low-Power Bio-Chemical Sensing Applications

This work introduces a novel approach that uses nanogap-embedded gate-all-around junction less transistors (GAA JLT) for label-free electrochemical detection of neutral and charges biochemicals such as protein, APTES, uricase, chOx, streptavidin, and Keratin. Utilizing the low cost and high sensitivity of FET-based sensors, changes in sub-threshold current and threshold voltage are examined to determine the sensor's response. The preferred technique to suppress (SCEs) short channel effects is the twin gate stack MOSFET. The study provides comprehensive insights into optimizing sensor performance by examining the consequences of drain and source doping and double gate on the junction less transistor's sensitivity. This study marks a significant advancement in FET-based sensors for residential and commercial applications, offering a feasible route toward sensitive and affordable biomolecule detection. The maximum sensitivity was reported in Keratin. Several analytical results and simulations from the SILVACO ATLAS TCAD simulator are in good agreement.